Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency
著者
S. Kurai;K. Anai;H. Miyake;K. Hiramatsu;Y. Yamada
掲載雑誌名
Journal of Applied Physics
学部・研究科名
理工学研究科
抄録
URL
本サイトへの掲載日
2015-1-13
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