Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes
著者
N. Okada;H. Kashihara;K. Sugimoto;Y. Yamada;K. Tadatomo
掲載雑誌名
Journal of Applied Physics
学部・研究科名
理工学研究科
抄録
URL
本サイトへの掲載日
2015-3-17
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